Invention Grant
- Patent Title: Method for forming spacers of different sizes
- Patent Title (中): 用于形成不同尺寸的间隔物的方法
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Application No.: US12025050Application Date: 2008-02-04
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Publication No.: US07674718B2Publication Date: 2010-03-09
- Inventor: Chia-Ho Liu , Chieh-Yu Tsai , Wei-Chen Lin , Chia-Ying Lin
- Applicant: Chia-Ho Liu , Chieh-Yu Tsai , Wei-Chen Lin , Chia-Ying Lin
- Applicant Address: TW Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
A method for forming spacers of different sizes includes the following steps. First a substrate is provided, which has a first element, a second element, a first material layer and a second material layer thereon. A first dry etching is performed to remove part of the second material layer to form a first spacer by the first element and to form a second side wall by the second element, so that the first material layer between the first spacer and the second side wall is exposed to become a damaged first material layer. A trimming procedure is performed to trim the damaged first material layer. A mask is used to cover the first element, the first spacer and part of the first material layer then a wet etching is performed to remove the second side wall.
Public/Granted literature
- US20090197417A1 METHOD FOR FORMING SPACERS OF DIFFERENT SIZES Public/Granted day:2009-08-06
Information query
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