Invention Grant
US07675092B2 Radiation tolerant CCD structure 有权
辐射耐受CCD结构

  • Patent Title: Radiation tolerant CCD structure
  • Patent Title (中): 辐射耐受CCD结构
  • Application No.: US10593328
    Application Date: 2005-03-16
  • Publication No.: US07675092B2
    Publication Date: 2010-03-09
  • Inventor: Peter James Pool
  • Applicant: Peter James Pool
  • Applicant Address: GB Essex
  • Assignee: E2V Technologies (UK) Limited
  • Current Assignee: E2V Technologies (UK) Limited
  • Current Assignee Address: GB Essex
  • Agency: Venable LLP
  • Agent Robert Kinberg; Robert S. Babayi
  • Priority: GB0406120.6 20040318
  • International Application: PCT/GB2005/001005 WO 20050316
  • International Announcement: WO2005/091623 WO 20050929
  • Main IPC: H01L29/768
  • IPC: H01L29/768
Radiation tolerant CCD structure
Abstract:
A CCD structure (20) tolerant to the adverse formation of traps resulting from exposure to irradiation by particles such as protons and neutrons is described. The CCD comprises an image plane (22) having a number of parallel transfer channels. Path defining structures (24), such as barrier implants, define a principal electron flow path through the channel, and define a number of secondary paths which converge on the principal path. The paths ensure that signal charge generated across the entire width of the channel is collected together into regions of smaller area so that the likelihood of interaction with traps is reduced, and charge containment is maintained near the optimum for all signal levels up to the full well.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的(H01L29/96优先)
H01L29/76 ...单极器件
H01L29/762 ....电荷转移器件
H01L29/765 .....电荷耦合器件
H01L29/768 ......具有由绝缘栅产生的场效层的
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