Invention Grant
- Patent Title: Radiation tolerant CCD structure
- Patent Title (中): 辐射耐受CCD结构
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Application No.: US10593328Application Date: 2005-03-16
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Publication No.: US07675092B2Publication Date: 2010-03-09
- Inventor: Peter James Pool
- Applicant: Peter James Pool
- Applicant Address: GB Essex
- Assignee: E2V Technologies (UK) Limited
- Current Assignee: E2V Technologies (UK) Limited
- Current Assignee Address: GB Essex
- Agency: Venable LLP
- Agent Robert Kinberg; Robert S. Babayi
- Priority: GB0406120.6 20040318
- International Application: PCT/GB2005/001005 WO 20050316
- International Announcement: WO2005/091623 WO 20050929
- Main IPC: H01L29/768
- IPC: H01L29/768

Abstract:
A CCD structure (20) tolerant to the adverse formation of traps resulting from exposure to irradiation by particles such as protons and neutrons is described. The CCD comprises an image plane (22) having a number of parallel transfer channels. Path defining structures (24), such as barrier implants, define a principal electron flow path through the channel, and define a number of secondary paths which converge on the principal path. The paths ensure that signal charge generated across the entire width of the channel is collected together into regions of smaller area so that the likelihood of interaction with traps is reduced, and charge containment is maintained near the optimum for all signal levels up to the full well.
Public/Granted literature
- US20070194351A1 Radiation tolerant ccd structure Public/Granted day:2007-08-23
Information query
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