Invention Grant
- Patent Title: Vertical coupling structure for non-adjacent resonators
- Patent Title (中): 非相邻谐振器的垂直耦合结构
-
Application No.: US11969920Application Date: 2008-01-07
-
Publication No.: US07675391B2Publication Date: 2010-03-09
- Inventor: Chia-Cheng Chuang , Ruey-Beei Wu , Tze-Min Shen
- Applicant: Chia-Cheng Chuang , Ruey-Beei Wu , Tze-Min Shen
- Applicant Address: TW Hsinchu TW Taipei
- Assignee: Industrial Technology Research Institute,National Taiwan University
- Current Assignee: Industrial Technology Research Institute,National Taiwan University
- Current Assignee Address: TW Hsinchu TW Taipei
- Agency: Jianq Chyun IP Office
- Priority: TW96123207 20070627
- Main IPC: H01P3/16
- IPC: H01P3/16 ; H01P3/18

Abstract:
A vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.
Public/Granted literature
- US20090002104A1 VERTICAL COUPLING STRUCTURE FOR NON-ADJACENT RESONATORS Public/Granted day:2009-01-01
Information query