Invention Grant
- Patent Title: Nonvolatile memory device and driving method thereof
- Patent Title (中): 非易失性存储器件及其驱动方法
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Application No.: US12035732Application Date: 2008-02-22
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Publication No.: US07675783B2Publication Date: 2010-03-09
- Inventor: Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
- Applicant: Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0019772 20070227; KR10-2007-0090617 20070906
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
Provided are a nonvolatile memory device and a driving method thereof. In the method of driving a nonvolatile memory device, a structural shape and position of a memory cell to be driven is determined, and then the memory cell is driven with an optimized operating condition according to a distribution of the memory cell using a determination result.
Public/Granted literature
- US20080205163A1 NONVOLATILE MEMORY DEVICE AND DRIVING METHOD THEREOF Public/Granted day:2008-08-28
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