发明授权
- 专利标题: Nonvolatile memory device and driving method thereof
- 专利标题(中): 非易失性存储器件及其驱动方法
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申请号: US12035732申请日: 2008-02-22
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公开(公告)号: US07675783B2公开(公告)日: 2010-03-09
- 发明人: Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
- 申请人: Ki-Tae Park , Ki-Nam Kim , Yeong-Taek Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2007-0019772 20070227; KR10-2007-0090617 20070906
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
Provided are a nonvolatile memory device and a driving method thereof. In the method of driving a nonvolatile memory device, a structural shape and position of a memory cell to be driven is determined, and then the memory cell is driven with an optimized operating condition according to a distribution of the memory cell using a determination result.
公开/授权文献
- US20080205163A1 NONVOLATILE MEMORY DEVICE AND DRIVING METHOD THEREOF 公开/授权日:2008-08-28