发明授权
- 专利标题: Vgs replication apparatus, method, and system
- 专利标题(中): Vgs复制设备,方法和系统
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申请号: US11644138申请日: 2006-12-22
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公开(公告)号: US07676213B2公开(公告)日: 2010-03-09
- 发明人: Stewart S. Taylor , Jing-Hong C. Zhan
- 申请人: Stewart S. Taylor , Jing-Hong C. Zhan
- 代理机构: Lemoine Patent Services, PLLC
- 代理商 Dana B. Lemoine
- 主分类号: H04B1/28
- IPC分类号: H04B1/28 ; G05F1/10
摘要:
A gate-to-source voltage (Vgs) replication circuit includes a diode-connected NMOS transistor coupled to a current source to draw a drain-to-source current therethrough. The generated Vgs is imposed across a source-to-gate junction of a PMOS transistor. A second PMOS transistor is coupled in series with the first PMOS transistor such that the source-to-gate voltage (Vsg) of the second PMOS transistor replicates the Vgs of the NMOS circuit. The second PMOS transistor is coupled as a source follower to bias other NMOS transistors.
公开/授权文献
- US20080150624A1 Vgs replication apparatus, method, and system 公开/授权日:2008-06-26
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