Invention Grant
- Patent Title: Integrated optical device and fabrication method thereof
- Patent Title (中): 集成光学元件及其制造方法
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Application No.: US11806067Application Date: 2007-05-29
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Publication No.: US07678594B2Publication Date: 2010-03-16
- Inventor: Tomokazu Katsuyama
- Applicant: Tomokazu Katsuyama
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2006-155089 20060602
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An integrated optical device comprising a first semiconductor optical element provided on a first region of the main face of a substrate and a second semiconductor optical element provided on a second region and optically coupled to the first semiconductor optical element is fabricated. A first III-V compound semiconductor layer containing Al element is formed on the main face. A second III-V compound semiconductor layer for forming the first semiconductor optical element is then formed on the first III-V compound semiconductor layer. An etching mask M is formed on the first region. The end point of the dry etching is detected by using the etching mask M to dry-etch the second III-V compound semiconductor layer while detecting Al element. The first semiconductor optical element is thus formed. The second semiconductor optical element is formed on the second region.
Public/Granted literature
- US20080003704A1 Integrated optical device and fabrication method thereof Public/Granted day:2008-01-03
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