发明授权
- 专利标题: Semiconductor method and device with mixed orientation substrate
- 专利标题(中): 具有混合取向衬底的半导体方法和器件
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申请号: US11868001申请日: 2007-10-05
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公开(公告)号: US07678622B2公开(公告)日: 2010-03-16
- 发明人: Jiang Yan , Chun-Yung Sung , Danny Pak-Chum Shum , Alois Gutmann
- 申请人: Jiang Yan , Chun-Yung Sung , Danny Pak-Chum Shum , Alois Gutmann
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
In a method of forming a semiconductor device, a wafer includes a first semiconductor region of a first crystal orientation and a second semiconductor region of a second crystal orientation. Insulating material is formed over the wafer. A first portion of the insulating material is removed to expose the first semiconductor region and a second portion of the insulating material is removed to expose the second semiconductor region. Semiconductor material of the first crystal orientation is epitaxially grown over the exposed first semiconductor region and semiconductor material of the second crystal orientation is epitaxially grown over the exposed second semiconductor region.