发明授权
- 专利标题： Crystallization method of amorphous silicon for forming large grain with single pulse laser
- 专利标题（中）： 用单脉冲激光形成大晶粒的非晶硅结晶方法
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申请号： US11430713申请日： 2006-05-09
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公开(公告)号： US07678666B2公开(公告)日： 2010-03-16
- 发明人: Ki Bong Song , Jun Ho Kim
- 申请人： Ki Bong Song , Jun Ho Kim
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2005-0067822 20050726; KR10-2005-0108943 20051115
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A layer structure comprising substrate, a metal layer, a first amorphous silicon layer, an insulating layer, and a second amorphous silicon layer, and a method of crystallizing the second amorphous silicon layer by irradiating single pulse laser to the layer structure are provided. The method provides an effect of forming large grain of amorphous silicon as good as using dual pulse laser or higher just by using single pulse laser without additional optical system. A semiconductor device employing the layer structure maximizes an electron mobility.