Invention Grant
- Patent Title: Method of making a semiconductor device having improved contacts
- Patent Title (中): 制造具有改善的接触的半导体器件的方法
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Application No.: US11213267Application Date: 2005-08-26
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Publication No.: US07678691B2Publication Date: 2010-03-16
- Inventor: Howard E. Rhodes , Luan Tran
- Applicant: Howard E. Rhodes , Luan Tran
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dinsmore & Shohl LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A semiconductor device and fabrication process wherein the device includes a conductive layer with a localized thick region positioned below the contact hole. In one embodiment of the invention, the thick region to which contact is made is formed by means of an opening in an underlayer of material. This embodiment of the device includes an underlayer of material having an opening therein; a layer of thin conductive material formed on the underlayer and in the opening; and overlayer of material having a contact hole therethrough formed on the layer of thin conductive material; a conductor contacting the layer of thin conductive material through the contact hole; and wherein the opening in the underlayer is positioned below the contact hole and sized and shaped to form a localized thick region in the layer of thin conductive material within the opening.
Public/Granted literature
- US20050282376A1 Method of making a semiconductor device having improved contacts Public/Granted day:2005-12-22
Information query
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