发明授权
- 专利标题： FinFET device with multiple fin structures
- 专利标题（中）： FinFET器件具有多个鳍结构
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申请号： US10754515申请日： 2004-01-12
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公开(公告)号： US07679134B1公开(公告)日： 2010-03-16
- 发明人: Matthew S. Buynoski , Judy Xilin An , Haihong Wang , Bin Yu
- 申请人： Matthew S. Buynoski , Judy Xilin An , Haihong Wang , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Globalfoundries
- 当前专利权人： Globalfoundries
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity & Harrity, LLP
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide layer. The semiconductor device further includes a source region formed at one end of the group of fin structures, a drain region formed at an opposite end of the group of fin structures, and at least one gate.
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