发明授权
- 专利标题: Bipolar transistor with silicided sub-collector
- 专利标题(中): 双极晶体管,带硅化子集电极
-
申请号: US11620242申请日: 2007-01-05
-
公开(公告)号: US07679164B2公开(公告)日: 2010-03-16
- 发明人: Francois Pagette , Christian Lavoie , Anna Topol
- 申请人: Francois Pagette , Christian Lavoie , Anna Topol
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Yuanmin Cai
- 主分类号: H01L27/102
- IPC分类号: H01L27/102
摘要:
Embodiments of the invention provide a semiconductor device including a collector in an active region; a first and a second sub-collector, the first sub-collector being a heavily doped semiconductor material adjacent to the collector and the second sub-collector being a silicided sub-collector next to the first sub-collector; and a silicided reach-through in contact with the second sub-collector, wherein the first and second sub-collectors and the silicided reach-through provide a continuous conductive pathway for electrical charges collected by the collector from the active region. Embodiments of the invention also provide methods of fabricating the same.
公开/授权文献
- US20080164494A1 BIPOLAR TRANSISTOR WITH SILICIDED SUB-COLLECTOR 公开/授权日:2008-07-10