Invention Grant
- Patent Title: Surface acoustic wave resonator, and surface acoustic wave filter
- Patent Title (中): 表面声波谐振器和表面声波滤波器
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Application No.: US10580915Application Date: 2005-01-06
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Publication No.: US07679474B2Publication Date: 2010-03-16
- Inventor: Tsutomu Igaki , Kazunori Nishimura , Kazuo Ikeda , Ken Matsunami
- Applicant: Tsutomu Igaki , Kazunori Nishimura , Kazuo Ikeda , Ken Matsunami
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2004-003860 20040109
- International Application: PCT/JP2005/000320 WO 20050106
- International Announcement: WO2005/067141 WO 20050721
- Main IPC: H03H9/25
- IPC: H03H9/25 ; H03H9/145 ; H03H9/64

Abstract:
A surface acoustic wave resonator has a piezoelectric substrate (11), an IDT (13) formed of a plurality of electrode fingers (12) disposed on piezoelectric substrate (11), and reflectors (14) disposed near the opposite ends of IDT (13). The IDT (13) has a gradation region where the electrode finger pitch of the plurality of electrode fingers (12) at the opposite ends is different from the electrode finger pitch near the center of the IDT (13). In this gradation region, the electrode finger pitches are sequentially varied in the range from the electrode finger at the farthest end that is one end of the gradation region to the electrode finger lying at the other end of the gradation region. The electrode finger pitch of the electrode fingers at the farthest end that is one end of the gradation region is set to be 1 through 5% smaller than the electrode finger pitch near the center of the IDT (13).
Public/Granted literature
- US20090108960A1 Surface Acoustic Wave Resonator, and Surface Acoustic Wave Filter Public/Granted day:2009-04-30
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