发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US11045066申请日: 2005-01-31
-
公开(公告)号: US07681107B2公开(公告)日: 2010-03-16
- 发明人: Makoto Muranushi , Masami Kanasugi , Shoji Taniguchi , Koichi Kuroiwa , Norihiro Ikeda
- 申请人: Makoto Muranushi , Masami Kanasugi , Shoji Taniguchi , Koichi Kuroiwa , Norihiro Ikeda
- 申请人地址: JP Yokohama
- 专利权人: Fujitsu Microelectronics Limited
- 当前专利权人: Fujitsu Microelectronics Limited
- 当前专利权人地址: JP Yokohama
- 代理机构: Arent Fox LLP
- 优先权: JP2004-314555 20041028
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A semiconductor having an internal memory of the present invention comprises a first memory copying and holding a data held in a storage device; a second memory holding a check code of the data held in the first memory, and being constantly supplied with a source voltage not lower than a data-holding-guarantee voltage; a data check unit detecting error in the data held by the first memory based on the check code; and reloading units copying only the data corresponded to the block having a data error detected therein by the data check unit, from the storage device to the first memory, to make it possible to detect any error in the data held in the first memory to thereby guarantee the data, and to lower the source voltage to be supplied to the first memory.
公开/授权文献
- US20060095829A1 Semiconductor device 公开/授权日:2006-05-04
信息查询