发明授权
- 专利标题： Dynamic control of back gate bias in a FinFET SRAM cell
- 专利标题（中）： FinFET SRAM单元中背栅极偏置的动态控制
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申请号： US11402400申请日： 2006-04-12
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公开(公告)号： US07681628B2公开(公告)日： 2010-03-23
- 发明人: Rajiv V. Joshi , Keunwoo Kim , Edward J. Nowak , Richard Q. Williams
- 申请人： Rajiv V. Joshi , Keunwoo Kim , Edward J. Nowak , Richard Q. Williams
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Joffman Warnick LLC
- 代理商 Brian Verminski
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
The present invention provides dynamic control of back gate bias on pull-up pFETs in a FinFET SRAM cell. A method according to the present invention includes providing a bias voltage to a back gate of at least one transistor in the SRAM cell, and dynamically controlling the bias voltage based on an operational mode (e.g., Read, Half-Select, Write, Standby) of the SRAM cell.
公开/授权文献
- US20070242497A1 Dynamic control of back gate bias in a FinFET SRAM cell 公开/授权日：2007-10-18
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