Invention Grant
- Patent Title: Method of manufacturing an electron emitting device by terminating a surface of a carbon film with hydrogen
- Patent Title (中): 通过用氢端接碳膜表面来制造电子发射器件的方法
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Application No.: US11779646Application Date: 2007-07-18
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Publication No.: US07682213B2Publication Date: 2010-03-23
- Inventor: Ryoji Fujiwara , Yoji Teramoto
- Applicant: Ryoji Fujiwara , Yoji Teramoto
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2003/165857 20030611; JP2004/082011 20040322
- Main IPC: H01J9/02
- IPC: H01J9/02 ; H01J9/04
Abstract:
An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
Public/Granted literature
- US20080012463A1 ELECTRON EMISSION DEVICE, ELECTRON SOURCE, AND IMAGE DISPLAY HAVING DIPOLE LAYER Public/Granted day:2008-01-17
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