发明授权
- 专利标题： Method for manufacturing semiconductor optical device
- 专利标题（中）： 制造半导体光学器件的方法
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申请号： US12019665申请日： 2008-01-25
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公开(公告)号： US07682857B2公开(公告)日： 2010-03-23
- 发明人: Yoshihiko Hanamaki , Takehiro Nishida , Makoto Takada , Kenichi Ono
- 申请人： Yoshihiko Hanamaki , Takehiro Nishida , Makoto Takada , Kenichi Ono
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2007-106940 20070416; JP2007-219687 20070827
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for manufacturing a semiconductor optical device includes: forming a p-type cladding layer; forming a capping layer on the p-type cladding layer, the capping layer being selectively etchable relative to the p-type cladding layer; forming a through film on the capping layer; forming a window structure by ion implantation; removing the through film after the ion implantation; and selectively removing the capping layer using a chemical solution.
公开/授权文献
- US20080254563A1 METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 公开/授权日：2008-10-16
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