发明授权
US07682897B2 DRAM fabrication method using oxidation spacers on pillar dielectric sidewalls
有权
在柱状电介质侧壁上使用氧化间隔物的DRAM制造方法
- 专利标题： DRAM fabrication method using oxidation spacers on pillar dielectric sidewalls
- 专利标题（中）： 在柱状电介质侧壁上使用氧化间隔物的DRAM制造方法
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申请号： US11758014申请日： 2007-06-05
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公开(公告)号： US07682897B2公开(公告)日： 2010-03-23
- 发明人: Chih-Huang Wu , Chien-Jung Yang
- 申请人： Chih-Huang Wu , Chien-Jung Yang
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 代理机构： Jianq Chyun IP Office
- 优先权： TW96111755A 20070403
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A process for fabricating a dynamic random access memory is provided. In this fabrication process, the steps of forming the silicon layer, and performing the ion implantation process and the removing process are repeated at least twice and the oxidation process is performed once to form an oxidation spacer that is larger than the landing area for a bit line contact in the prior art. Therefore, when defining a bit line contact opening, a larger process window is fabricated to prevent the occurrence of a short between the bit line contact and the gate of a transistor due to misalignment.
公开/授权文献
- US20080248619A1 PROCESS FOR FABRICATING DYNAMIC RANDOM ACCESS MEMORY 公开/授权日：2008-10-09
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