发明授权
- 专利标题： Use of Cl2 and/or HCl during silicon epitaxial film formation
- 专利标题（中）： 在硅外延膜形成期间使用Cl2和/或HCl
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申请号： US11227974申请日： 2005-09-14
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公开(公告)号： US07682940B2公开(公告)日： 2010-03-23
- 发明人: Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
- 申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Dugan & Dugan, PC
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36
摘要：
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
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