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US07682954B2 Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method 有权
杂质导入方法，杂质导入装置以及利用该方法制造的半导体装置

Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
摘要：
An impurity region having a box-shaped impurity profile is formed.An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.
摘要（中）：

形成具有盒状杂质分布的杂质区域。 杂质引入方法包括将期望的杂质引入固体基体的表面的步骤，以及在杂质引入步骤之后将等离子体辐射到固体基体表面的步骤，从而形成具有大致盒形的杂质分布， 形状。

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