Invention Grant
- Patent Title: Method of forming a carbon nanotube structure and method of manufacturing field emission device using the method of forming a carbon nanotube structure
- Patent Title (中): 形成碳纳米管结构的方法和使用形成碳纳米管结构的方法制造场致发射器件的方法
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Application No.: US11656370Application Date: 2007-01-23
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Publication No.: US07682973B2Publication Date: 2010-03-23
- Inventor: Ha-Jin Kim , In-Taek Han , Young-Chul Choi , Kwang-Seok Jeong
- Applicant: Ha-Jin Kim , In-Taek Han , Young-Chul Choi , Kwang-Seok Jeong
- Applicant Address: KR Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2006-0060663 20060630
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method of forming a Carbon NanoTube (CNT) structure and a method of manufacturing a Field Emission Device (FED) using the method of forming a CNT structure includes: forming an electrode on a substrate, forming a buffer layer on the electrode, forming a catalyst layer in a particle shape on the buffer layer, etching the buffer layer exposed through the catalyst layer, and growing CNTs from the catalyst layer formed on the etched buffer layer.
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