发明授权
- 专利标题： Semiconductor device fabrication method
- 专利标题（中）： 半导体器件制造方法
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申请号： US11472462申请日： 2006-06-22
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公开(公告)号： US07682975B2公开(公告)日： 2010-03-23
- 发明人: Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
- 申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-181772 20050622
- 主分类号： H01L21/461
- IPC分类号： H01L21/461 ; H01L21/4763
摘要：
A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.
公开/授权文献
- US20060293191A1 Semiconductor device fabrication method 公开/授权日：2006-12-28
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