发明授权
- 专利标题： Dual conversion gain gate and capacitor combination
- 专利标题（中）： 双转换增益门和电容组合
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申请号： US12230014申请日： 2008-08-21
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公开(公告)号： US07683306B2公开(公告)日： 2010-03-23
- 发明人: Jeffrey A. McKee
- 申请人： Jeffrey A. McKee
- 申请人地址： US ID Boise
- 专利权人： Micron Technology Inc.
- 当前专利权人： Micron Technology Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A pixel cell array architecture having a dual conversion gain. A dual conversion gain element is coupled between a floating diffusion region and a respective storage capacitor. The dual conversion gain element having a control gate switches in the capacitance of the capacitor to change the conversion gain of the floating diffusion region from a first conversion gain to a second conversion gain. In order to increase the efficient use of space, the dual conversion gain element gate also functions as the bottom plate of the capacitor. In one particular embodiment of the invention, a high dynamic range transistor is used in conjunction with a pixel cell having a capacitor-DCG gate combination; in another embodiment, adjacent pixels share pixel components, including the capacitor-DCG combination.
公开/授权文献
- US20080315261A1 Dual conversion gain gate and capacitor combination 公开/授权日：2008-12-25
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