Invention Grant
- Patent Title: Facet extraction LED and method for manufacturing the same
- Patent Title (中): 方形提取LED及其制造方法
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Application No.: US11707062Application Date: 2007-02-16
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Publication No.: US07683385B2Publication Date: 2010-03-23
- Inventor: Tae Won Lee , Hee Seok Park , Masayoshi Koike
- Applicant: Tae Won Lee , Hee Seok Park , Masayoshi Koike
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2006-0015274 20060216
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L31/12 ; H01L31/153 ; H01L33/00

Abstract:
A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.
Public/Granted literature
- US20070187702A1 Facet extraction LED and method for manufacturing the same Public/Granted day:2007-08-16
Information query
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