利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US07683417B2 Memory device with memory cell including MuGFET and fin capacitor 有权
具有存储单元的存储器件包括MuGFET和鳍式电容器

Memory device with memory cell including MuGFET and fin capacitor
摘要：
One embodiment of the present invention relates to a memory cell. The memory cell includes a multi-gate field effect transistor associated with a first region of a semiconductor fin. The memory cell also includes a fin capacitor coupled to a drain of the multi-gate field effect transistor and associated with a second region of the semiconductor fin, where the fin capacitor has an approximately degenerate doping concentration in the second region. Other devices and methods are also disclosed.
摘要（中）：

本发明的一个实施例涉及一种存储单元。 存储单元包括与半导体鳍片的第一区域相关联的多栅极场效应晶体管。 存储单元还包括耦合到多栅极场效应晶体管的漏极并与半导体鳍片的第二区域相关联的散热片电容器，其中散热片电容器在第二区域中具有大致简并掺杂浓度。 还公开了其它装置和方法。

公开/授权文献
信息查询
Espacenet
0/0