发明授权
- 专利标题： High-temperature stable gate structure with metallic electrode
- 专利标题（中）： 具有金属电极的高温稳定栅极结构
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申请号： US12277539申请日： 2008-11-25
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公开(公告)号： US07683418B2公开(公告)日： 2010-03-23
- 发明人: Dae-Gyu Park , Oleg G. Gluschenkov , Michael A. Gribelyuk , Kwong Hon Wong
- 申请人： Dae-Gyu Park , Oleg G. Gluschenkov , Michael A. Gribelyuk , Kwong Hon Wong
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms; forming a layer of metal atoms atop the dielectric layer within a non-oxidizing atmosphere, wherein the layer of metal atoms has a thickness of less than about 15 Å; forming an oxygen diffusion barrier atop the layer of metal atoms, wherein the non-oxidizing atmosphere is maintained; forming a gate conductor atop the oxygen diffusion barrier; and annealing the layer of metal atoms and the dielectric layer, wherein the layer of metal atoms reacts with the dielectric layer to provide a continuous metal oxide layer having a dielectric constant ranging from about 25 to about 30 and a thickness less than about 15 Å.
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