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US07683445B2 Enhanced permeability device structures and method 失效
增强渗透性装置结构和方法

Enhanced permeability device structures and method
摘要：
Low power magnetoelectronic device structures and methods therefore are provided. The magnetoelectronic device structure (100, 150, 450, 451) comprises a programming line (104, 154, 156, 454, 456), a magnetoelectronic device (102, 152, 452) magnetically coupled to the programming line (104, 154, 156, 454, 456), and an enhanced permeability dielectric (EPD) material (106, 108, 110, 158, 160, 162, 458, 460, 462) disposed adjacent the magnetoelectronic device. The EPD material (106, 108, 110, 158, 160, 162, 458, 460, 462) comprises multiple composite layers (408) of magnetic nano-particles (406) embedded in a dielectric matrix (409). The composition of the composite layers is chosen to provide a predetermined permeability profile. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating the magnetoelectronic device (102, 152, 452) and depositing the programming line (104, 154, 156, 454, 456). The EPD material (106, 108, 110, 158, 160, 162, 458, 460, 462) comprising the multiple composite layers (408) is formed around the magnetoelectronic device (102, 152, 452) and/or between the device (102, 152, 452) and the programming line (104, 154, 156, 454, 456). The presence of the EPD structure (470, 480, 490) in proximity to the programming line (104, 154, 156, 454, 456) and/or the magnetoelectronic device (102, 152, 452) reduces the required programming current.
摘要（中）：

因此提供了低功率磁电子器件结构和方法。 磁电子器件结构（100,150,450,451）包括编程线（104,154,156,454,456），磁耦合到编程线（104,154,452）的磁电子器件（102,152,452） 156,454,456）以及邻近磁电子器件设置的增强磁导率电介质（EPD）材料（106,108,110,158,160,162,458,460,462）。 EPD材料（106,108,110,158,160,162,458,460,462）包括嵌入电介质矩阵（409）中的磁性纳米颗粒（406）的多个复合层（408）。 选择复合层的组成以提供预定的渗透率分布。 还提供了一种制造磁电子器件结构的方法。 该方法包括制造磁电子器件（102,152,452）并沉积编程线（104,154,156,454,456）。 包括多个复合层（408）的EPD材料（106,108,110,158,160,162,458,460,462）形成在磁电子器件（102,152,452）周围和/或在器件（ 102，152,452）和编程线（104,154,156,454,465）。 靠近编程线（104,154,156,454,465）和/或磁电子器件（102,152,452）的EPD结构（470,480,490）的存在减少了所需的编程电流。

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