发明授权
- 专利标题： Bonding method for through-silicon-via based 3D wafer stacking
- 专利标题（中）： 基于硅通孔的3D晶片堆叠的粘合方法
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申请号： US12131788申请日： 2008-06-02
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公开(公告)号： US07683459B2公开(公告)日： 2010-03-23
- 发明人: Wei Ma , Xunqing Shu , Chang Hwa Chung
- 申请人： Wei Ma , Xunqing Shu , Chang Hwa Chung
- 申请人地址： CN Shatin, New Territories, Hong Kong
- 专利权人： Hong Kong Applied Science and Technology Research Institute Company, Ltd.
- 当前专利权人： Hong Kong Applied Science and Technology Research Institute Company, Ltd.
- 当前专利权人地址： CN Shatin, New Territories, Hong Kong
- 代理机构： Wells St. John, P.S.
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L21/00
摘要：
There is described a hybrid bonding method for through-silicon-via based wafer stacking. Patterned adhesive layers are provided to join together adjacent wafers in the stack, while solder bonding is used to electrically connect the vias. The adhesive layers are patterned to enable outgassing and to provide stress relief.
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