发明授权
- 专利标题： Electrode and interconnect materials for MEMS devices
- 专利标题（中）： 用于MEMS器件的电极和互连材料
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申请号： US12115395申请日： 2008-05-05
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公开(公告)号： US07688494B2公开(公告)日： 2010-03-30
- 发明人: Gang Xu , Evgeni Gousev
- 申请人： Gang Xu , Evgeni Gousev
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM MEMS Technologies, Inc.
- 当前专利权人： QUALCOMM MEMS Technologies, Inc.
- 当前专利权人地址： US CA San Diego
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： G02F1/03
- IPC分类号： G02F1/03 ; G02B26/00
摘要：
A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.
公开/授权文献
- US20080239449A1 ELECTRODE AND INTERCONNECT MATERIALS FOR MEMS DEVICES 公开/授权日：2008-10-02