发明授权
- 专利标题: Multilayer chip capacitor
- 专利标题(中): 多层片式电容器
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申请号: US12407298申请日: 2009-03-19
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公开(公告)号: US07688568B1公开(公告)日: 2010-03-30
- 发明人: Byoung Hwa Lee , Sung Kwon Wi , Hong Yeon Cho , Dong Seok Park , Sang Soo Park , Min Cheol Park
- 申请人: Byoung Hwa Lee , Sung Kwon Wi , Hong Yeon Cho , Dong Seok Park , Sang Soo Park , Min Cheol Park
- 申请人地址: KR Gyunggi-Do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Gyunggi-Do
- 代理机构: McDermott Will & Emery LLP
- 优先权: KR10-2008-0099742 20081010
- 主分类号: H01G4/228
- IPC分类号: H01G4/228
摘要:
A multilayer chip capacitor includes: a capacitor body having a plurality of dielectric layers laminated therein and comprising first and second capacitor units; and first to fourth external electrodes formed on an outer surface of the capacitor body, wherein the first capacitor unit comprises first and second internal electrodes facing each other with the dielectric layer interposed therebetween, connected to the first and second external electrodes, and having different polarities, each pair of first and second internal electrodes being laminated one or more times to discriminate a plurality of capacitors with a certain capacitance, the second capacitor unit comprises third and fourth internal electrodes facing each other with the dielectric layer interposed therebetween, connected to the third and fourth external electrodes, and having the same polarities as those of the first and second internal electrodes, each pair of third and fourth internal electrodes being laminated one or more times to discriminate one or more capacitors each with a certain capacitance, and at least three capacitors included in the first and second capacitor units have different capacitances or resonance frequencies.
公开/授权文献
- US20100091427A1 MULTILAYER CHIP CAPACITOR 公开/授权日:2010-04-15
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