发明授权
- 专利标题： Semiconductor device structures incorporating voids and methods of fabricating such structures
- 专利标题（中）： 包含空隙的半导体器件结构和制造这种结构的方法
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申请号： US11425588申请日： 2006-06-21
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公开(公告)号： US07691712B2公开(公告)日： 2010-04-06
- 发明人: Dureseti Chidambarrao , Ricardo Alves Donaton , Jack Allan Mandelman
- 申请人： Dureseti Chidambarrao , Ricardo Alves Donaton , Jack Allan Mandelman
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Wood, Herron & Evans, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
Semiconductor device structures and fabrication methods for field effect transistors in which a gate electrode is provided with an air gap or void disposed adjacent to a sidewall of the gate electrode. The void may be bounded by a dielectric spacer proximate to the sidewall of the gate electrode and a dielectric layer having a spaced relationship with the dielectric spacer. The methods of the invention involve the use of a temporary spacer consisting of a sacrificial material supplied adjacent to the sidewall of the gate electrode, which is removed after the dielectric layer is formed.
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