Invention Grant
US07692029B2 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
有权
星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
- Patent Title: Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
- Patent Title (中): 星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
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Application No.: US11116326Application Date: 2005-04-28
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Publication No.: US07692029B2Publication Date: 2010-04-06
- Inventor: Kook Min Han , Eun Jeong Jeong , Chang Ju Kim , Eun Kyung Lee
- Applicant: Kook Min Han , Eun Jeong Jeong , Chang Ju Kim , Eun Kyung Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2004-0098674 20041129
- Main IPC: C07D409/14
- IPC: C07D409/14 ; C07D417/14 ; C07D413/14 ; H01L51/00

Abstract:
A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
Public/Granted literature
- US20060113527A1 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same Public/Granted day:2006-06-01
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