发明授权
- 专利标题： Magnetic memory including ferromagnetic yoke and antiferromagnetic layer
- 专利标题（中）： 磁记忆包括铁磁轭和反铁磁层
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申请号： US11430630申请日： 2006-05-04
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公开(公告)号： US07692229B2公开(公告)日： 2010-04-06
- 发明人: Susumu Haratani , Takashi Asatani
- 申请人： Susumu Haratani , Takashi Asatani
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Porzio, Bromberg & Newman, P.C.
- 优先权： JP2005-217141 20050727; JP2006-073982 20060317
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization of this ferromagnetic body 20 in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.
公开/授权文献
- US20070023807A1 Magnetic memory 公开/授权日：2007-02-01
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