发明授权
- 专利标题: EEPROM array with well contacts
- 专利标题(中): 具有良好触点的EEPROM阵列
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申请号: US11567805申请日: 2006-12-07
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公开(公告)号: US07692252B2公开(公告)日: 2010-04-06
- 发明人: Atsuhiro Sato , Kikuko Sugimae , Masayuki Ichige
- 申请人: Atsuhiro Sato , Kikuko Sugimae , Masayuki Ichige
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-100955 20050331
- 主分类号: H01L29/24
- IPC分类号: H01L29/24 ; G11C16/04
摘要:
A semiconductor integrated circuit device includes a cell well, a memory cell array formed on the cell well and having a memory cell area and cell well contact area, first wiring bodies arranged in the memory cell area, and second wiring bodies arranged in the cell well contact area. The layout pattern of the second wiring bodies is the same as the layout pattern of the first wiring bodies. The cell well contact area comprises cell well contacts that have the same dopant type as the cell well and that function as source/drain regions of dummy transistors formed in the cell well contact area.
公开/授权文献
- US20070096218A1 EEPROM ARRAY WITH WELL CONTACTS 公开/授权日:2007-05-03
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