发明授权
- 专利标题: Integrated circuit with capacitor and method for the production thereof
- 专利标题(中): 具有电容器的集成电路及其生产方法
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申请号: US11368254申请日: 2006-03-03
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公开(公告)号: US07692266B2公开(公告)日: 2010-04-06
- 发明人: Thomas Goebel , Johann Helneder , Heinrich Körner , Andrea Mitchell , Markus Schwerd , Martin Seck , Holger Torwesten
- 申请人: Thomas Goebel , Johann Helneder , Heinrich Körner , Andrea Mitchell , Markus Schwerd , Martin Seck , Holger Torwesten
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies A.G.
- 当前专利权人: Infineon Technologies A.G.
- 当前专利权人地址: DE Munich
- 代理机构: Brinks Hofer Gilson & Lione
- 优先权: DE10341059 20030905
- 主分类号: H01L29/43
- IPC分类号: H01L29/43
摘要:
An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.
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