发明授权
US07692968B2 Operation method of non-volatile memory and method of improving coupling interference from nitride-based memory
有权
非易失性存储器的操作方法和改善氮化物存储器耦合干扰的方法
- 专利标题： Operation method of non-volatile memory and method of improving coupling interference from nitride-based memory
- 专利标题（中）： 非易失性存储器的操作方法和改善氮化物存储器耦合干扰的方法
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申请号： US11782149申请日： 2007-07-24
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公开(公告)号： US07692968B2公开(公告)日： 2010-04-06
- 发明人: Yao-Wen Chang , Guan-Wei Wu , Tao-Cheng Lu
- 申请人： Yao-Wen Chang , Guan-Wei Wu , Tao-Cheng Lu
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX International Co., Ltd.
- 当前专利权人： MACRONIX International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
An operation method of a non-volatile memory is provided. The operation method is that a reading operation is performed to a selected nitride-based memory cell, a first positive voltage is applied to a word line adjacent to one side of the selected memory cell and a second positive voltage is applied to another word line adjacent to the other side of the selected memory cell. The operation method of this present invention not only can reduce a coupling interference issue but also can obtain a wider operation window.
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