发明授权
US07696513B2 Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same 有权
使用氧化物半导体薄膜晶体管的发光装置及使用其的图像显示装置

  • 专利标题: Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same
  • 专利标题(中): 使用氧化物半导体薄膜晶体管的发光装置及使用其的图像显示装置
  • 申请号: US12282721
    申请日: 2007-03-02
  • 公开(公告)号: US07696513B2
    公开(公告)日: 2010-04-13
  • 发明人: Ryo HayashiTatsuya Iwasaki
  • 申请人: Ryo HayashiTatsuya Iwasaki
  • 申请人地址: JP Tokyo
  • 专利权人: Canon Kabushiki Kaisha
  • 当前专利权人: Canon Kabushiki Kaisha
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Fitzpatrick, Cella, Harper & Scinto
  • 优先权: JP2006-074631 20060317
  • 国际申请: PCT/JP2007/054601 WO 20070302
  • 国际公布: WO2007/119321 WO 20071025
  • 主分类号: H01L21/16
  • IPC分类号: H01L21/16
Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same
摘要:
The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate.
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