发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11338715申请日： 2006-01-25
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公开(公告)号： US07696531B2公开(公告)日： 2010-04-13
- 发明人: Akio Miyao
- 申请人： Akio Miyao
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-067535 20050310
- 主分类号： H01L29/74
- IPC分类号： H01L29/74 ; H01L21/4763
摘要：
A semiconductor device includes: an channel layer formed on a semiconductor substrate; a drain electrode and a source electrode both formed on the channel layer apart from each other; a surface passivation film formed on the channel layer so as to cover the channel layer except for the drain electrode and the source electrode; a gate electrode disposed between the drain electrode and the source electrode so as to penetrate the surface passivation film; a field plate electrode provided on the surface passivation film between the drain electrode and the gate electrode at a predetermined distance from the gate electrode; and a connecting plate having a bridge structure connecting the gate electrode to the field plate electrode. The bridge structure may be formed with at least one opening penetrating the connecting plate so as to face the surface passivation film with a predetermined space.
公开/授权文献
- US20060202246A1 Semiconductor device and manufacturing method thereof 公开/授权日：2006-09-14
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