发明授权
US07696600B2 IGBT device and related device having robustness under extreme conditions
有权
IGBT器件及相关器件在极端条件下具有鲁棒性
- 专利标题： IGBT device and related device having robustness under extreme conditions
- 专利标题（中）： IGBT器件及相关器件在极端条件下具有鲁棒性
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申请号： US11713226申请日： 2007-03-02
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公开(公告)号： US07696600B2公开(公告)日： 2010-04-13
- 发明人: Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
- 申请人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Maginot, Moore & Beck
- 优先权： DE10361136 20031223
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/72
摘要：
A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.
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