发明授权
- 专利标题: Vicinal gallium nitride substrate for high quality homoepitaxy
- 专利标题(中): 用于高质量同质外延的最终氮化镓衬底
-
申请号: US12102275申请日: 2008-04-14
-
公开(公告)号: US07700203B2公开(公告)日: 2010-04-20
- 发明人: Xueping Xu , Robert P. Vaudo , Jeffrey S. Flynn , George R. Brandes
- 申请人: Xueping Xu , Robert P. Vaudo , Jeffrey S. Flynn , George R. Brandes
- 申请人地址: US NC Durham
- 专利权人: Cree, Inc.
- 当前专利权人: Cree, Inc.
- 当前专利权人地址: US NC Durham
- 代理机构: Intellectual Property / Technology Law
- 代理商 Vincent K. Gustafson
- 主分类号: B32B18/00
- IPC分类号: B32B18/00 ; B32B11/08
摘要:
A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.