发明授权
- 专利标题： Reflective mask blank, reflective mask, and method of manufacturing semiconductor device
- 专利标题（中）： 反光掩模板，反射掩模和半导体器件的制造方法
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申请号： US11416208申请日： 2006-05-03
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公开(公告)号： US07700245B2公开(公告)日： 2010-04-20
- 发明人: Morio Hosoya , Tsutomu Shoki
- 申请人： Morio Hosoya , Tsutomu Shoki
- 申请人地址： JP Shinjuku-ku, Tokyo
- 专利权人： Hoya Corporation
- 当前专利权人： Hoya Corporation
- 当前专利权人地址： JP Shinjuku-ku, Tokyo
- 代理机构： Sughrue Mion, PLLC
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; B32B17/10
摘要：
A reflective mask blank and a reflective mask each have, on a multilayer reflective film, a protective film that protects the multilayer reflective film from etching during pattern formation of an absorber layer or a buffer layer formed on the protective film. The protective film is formed by a ruthenium compound containing ruthenium (Ru) and at least one selected from the group consisting of molybdenum (Mo), niobium (Nb), zirconium (Zr), yttrium (Y), boron (B), titanium (Ti), and lanthanum (La). A reflection enhancement film of Ru may be further formed on the surface of the protective film.
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