发明授权
US07700465B2 Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
失效
使用具有低解离和低最小等离子体电压的等离子体源的等离子体浸没离子注入工艺
- 专利标题： Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
- 专利标题（中）： 使用具有低解离和低最小等离子体电压的等离子体源的等离子体浸没离子注入工艺
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申请号： US10646533申请日： 2003-08-22
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公开(公告)号： US07700465B2公开(公告)日： 2010-04-20
- 发明人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
- 申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Law Office of Robert M. Wallace
- 主分类号： H01L21/26
- IPC分类号： H01L21/26
摘要：
A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.