Invention Grant
- Patent Title: Oxide-like seasoning for dielectric low k films
- Patent Title (中): 电介质低k薄膜的氧化物调味料
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Application No.: US11424723Application Date: 2006-06-16
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Publication No.: US07700486B2Publication Date: 2010-04-20
- Inventor: Sohyun Park , Wen H. Zhu , Tzu-Fang Huang , Li-Qun Xia , Hichem M'Saad
- Applicant: Sohyun Park , Wen H. Zhu , Tzu-Fang Huang , Li-Qun Xia , Hichem M'Saad
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan
- Main IPC: H01L21/44
- IPC: H01L21/44 ; G01F7/00
Abstract:
A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.
Public/Granted literature
- US20060219175A1 OXIDE-LIKE SEASONING FOR DIELECTRIC LOW K FILMS Public/Granted day:2006-10-05
Information query
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