发明授权
- 专利标题: Gallium nitride-based compound semiconductor device
- 专利标题(中): 氮化镓系化合物半导体器件
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申请号: US10521544申请日: 2003-07-01
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公开(公告)号: US07700940B2公开(公告)日: 2010-04-20
- 发明人: Shiro Sakai , Tomoya Sugahara
- 申请人: Shiro Sakai , Tomoya Sugahara
- 申请人地址: JP Tokushima
- 专利权人: Nitride Semiconductor Co., Ltd.
- 当前专利权人: Nitride Semiconductor Co., Ltd.
- 当前专利权人地址: JP Tokushima
- 代理机构: Osha • Liang LLP
- 优先权: JP2002-206581 20020716
- 国际申请: PCT/JP03/08365 WO 20030701
- 国际公布: WO2004/008551 WO 20040122
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
An LED emitting light of wavelength mainly 375 nm or below. The LED includes a GaN layer (16), an n-clad layer (20), an AlInGaN buffer layer (22), a light emitting layer (24), a p-clad layer (26), a p-electrode (30), and an n-electrode (32) arranged on a substrate (10). The light emitting layer (24) has a multi-layer quantum well structure (MQW) in which an InGaN well layer and an AlInGaN barrier layer are superimposed. The quantum well structure increases the effective band gap of the InGaN well layer and reduces the light emitting wavelength. Moreover, by using the AlInGaN buffer layer (22) as the underlying layer of the light emitting layer (24), it is possible to effectively inject electrons into the light emitting layer (24), thereby increasing the light emitting efficiency.
公开/授权文献
- US20050236642A1 Gallium nitride-based compound semiconductor device 公开/授权日:2005-10-27