发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12142566申请日: 2008-06-19
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公开(公告)号: US07700992B2公开(公告)日: 2010-04-20
- 发明人: Toshihiro Tanaka , Yukiko Umemoto , Mitsuru Hiraki , Yutaka Shinagawa , Masamichi Fujito , Kazufumi Suzukawa , Hiroyuki Tanikawa , Takashi Yamaki , Yoshiaki Kamigaki , Shinichi Minami , Kozo Katayama , Nozomu Matsuzaki
- 申请人: Toshihiro Tanaka , Yukiko Umemoto , Mitsuru Hiraki , Yutaka Shinagawa , Masamichi Fujito , Kazufumi Suzukawa , Hiroyuki Tanikawa , Takashi Yamaki , Yoshiaki Kamigaki , Shinichi Minami , Kozo Katayama , Nozomu Matsuzaki
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人: Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2001-227203 20010727; JP2001-228870 20010730
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc
公开/授权文献
- US20090010072A1 SEMICONDUCTOR DEVICE 公开/授权日:2009-01-08