Invention Grant
- Patent Title: High-efficiency class-AB amplifier
- Patent Title (中): 高效率AB类放大器
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Application No.: US11798293Application Date: 2007-05-11
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Publication No.: US07701295B2Publication Date: 2010-04-20
- Inventor: Ovidiu Bajdechi , Christopher M. Ward , Klaas Bult
- Applicant: Ovidiu Bajdechi , Christopher M. Ward , Klaas Bult
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H03F1/52
- IPC: H03F1/52

Abstract:
A high efficiency class-AB amplifier is disclosed. The amplifier comprises a first input stage and a second input stage, both coupled to a class-AB biasing mesh and an output stage, wherein the outputs of the first and second input stages are directly coupled to the output transistors in the output stage. In one embodiment, a first gate of the first input stage and of the second input stage are coupled together to receive the same input and a second gate of the first input stage and of the second input stage are coupled together to receive the same input. In another embodiment, the first input stage and second input stage may further comprise cascode transistors for coupling the two input stages to the class-AB biasing mesh. In yet another embodiment, a 3V supply is used and 1V transistors are used to improve gain and 3V transistors are used to protect the 1V transistors.
Public/Granted literature
- US20070273442A1 High-efficiency class-AB amplifier Public/Granted day:2007-11-29
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