发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US11528641申请日： 2006-09-28
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公开(公告)号： US07701786B2公开(公告)日： 2010-04-20
- 发明人: Sang-Hee Lee
- 申请人： Sang-Hee Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor, Inc.
- 当前专利权人： Hynix Semiconductor, Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Law Firm PLC
- 优先权： KR10-2005-0091679 20050929; KR2006-0049004 20060530
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A semiconductor memory device changes a pulse width of an over driving signal according to operation modes, which differ by a degree of accessing memory banks during an over driving operation. An over driver supplies an RTO line of the bit line sense amplifier with an over driving voltage in response to the over driving signal and an over driving signal generator changes a pulse width of the over driving signal according to the operation modes. An increase in the VCORE due to excess supply voltage VDD in the over driving operation is prevented.
公开/授权文献
- US20070070785A1 Semiconductor memory device 公开/授权日：2007-03-29
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