发明授权
- 专利标题: Address mapping method and mapping information managing method for flash memory, and flash memory using the same
- 专利标题(中): 闪存的地址映射方法和映射信息管理方法,以及使用其的闪存
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申请号: US11018673申请日: 2004-12-22
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公开(公告)号: US07702844B2公开(公告)日: 2010-04-20
- 发明人: Tae-sun Chung , Ji-hyun In , Myung-jin Jung
- 申请人: Tae-sun Chung , Ji-hyun In , Myung-jin Jung
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2003-0100488 20031230
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A method for minimizing the degradation of performance upon accessing a flash memory using a logical-physical mapping scheme, and a method for efficiently storing and managing information on logical-physical mapping in a flash memory. A method for writing data in a flash memory includes determining whether a sector is empty in a physical page having a most recently written logical page number of data to be written, the offset of the sector matching that of the data to be written; if the sector is empty, writing the data in the sector to the physical page; and if the sector is not empty, selecting an empty physical page to write the data to a sector in the selected empty physical page of which the offset matches that of the data to be written and writing a logical page number for the data to the selected empty physical page.
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