发明授权
US07704763B2 Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
有权
高效率的III族氮化物基发光二极管通过在N面表面上制造结构
- 专利标题： Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
- 专利标题（中）： 高效率的III族氮化物基发光二极管通过在N面表面上制造结构
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申请号： US10581940申请日： 2003-12-09
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公开(公告)号： US07704763B2公开(公告)日： 2010-04-27
- 发明人: Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
- 申请人： Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
- 申请人地址： US CA Oakland JP Saitama Prefecture
- 专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人地址： US CA Oakland JP Saitama Prefecture
- 代理机构： Gates & Cooper LLP
- 国际申请： PCT/US03/39211 WO 20031209
- 国际公布： WO2005/064666 WO 20050714
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
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