Invention Grant
- Patent Title: CMOS image sensor and fabricating method thereof
- Patent Title (中): CMOS图像传感器及其制造方法
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Application No.: US11319590Application Date: 2005-12-29
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Publication No.: US07705378B2Publication Date: 2010-04-27
- Inventor: Chang Eun Lee
- Applicant: Chang Eun Lee
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2004-0117182 20041230
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L21/00

Abstract:
A CMOS image sensor and fabricating method thereof can enhance the quality of the image sensor by preventing unnecessary diffused reflection of light by providing an opaque filter layer next to a microlens. The CMOS image sensor includes a photodiode, an insulating interlayer, a metal line, a device protecting layer, a microlens on the device protecting layer and overlapped with the photodiode, and an opaque layer pattern on the device protecting layer next to the microlens.
Public/Granted literature
- US20060145176A1 CMOS image sensor and fabricating method thereof Public/Granted day:2006-07-06
Information query
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